• DocumentCode
    2241911
  • Title

    Sub-300 nm UV LEDs with defect reduction layer and vertical-injection architecture

  • Author

    Chua, Christopher ; Yang, Zhihong ; Knollenberg, Clifford ; Teepe, Mark ; Johnson, Noble

  • Author_Institution
    Palo Alto Res. Center, Palo Alto, CA, USA
  • fYear
    2011
  • fDate
    1-6 May 2011
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    We present UV LEDs operating at wavelengths below 300 nm. The heterostructure features a defect reduction layer that bends threading dislocations away from the active region. Vertical-injection structures were fabricated via laser lift-off.
  • Keywords
    light emitting diodes; UV LED; active region; defect reduction layer; laser lift-off; threading dislocations; vertical-injection architecture; vertical-injection structures; wavelength 300 nm; Aluminum gallium nitride; Gallium nitride; Lasers; Light emitting diodes; Substrates; Superlattices;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics (CLEO), 2011 Conference on
  • Conference_Location
    Baltimore, MD
  • Print_ISBN
    978-1-4577-1223-4
  • Type

    conf

  • Filename
    5950686
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2241911