• DocumentCode
    2241972
  • Title

    AlGaN-based deep ultraviolet LEDs by plasma assisted molecular beam epitaxy

  • Author

    Kao, Chen-Kai ; Liao, Yitao ; Thomidis, Christos ; Moldawer, Adam ; Bhattarai, Dipesh ; Sun, Haiding ; Moustakas, Theodore D.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Boston Univ., Boston, MA, USA
  • fYear
    2011
  • fDate
    1-6 May 2011
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    We report the development of AlGaN-based deep UV LEDs by RF plasma-assisted MBE. Devices emitting at 273 nm were evaluated at bare-die configuration and found to have an output power of 1.3 mW at 100 mA injection current and external quantum efficiency of 0.4%.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium compounds; light emitting diodes; molecular beam epitaxial growth; plasma materials processing; ultraviolet sources; wide band gap semiconductors; AlGaN; RF plasma assisted MBE; bare die configuration; current 100 mA; deep ultraviolet LED; plasma assisted molecular beam epitaxy; power 1.3 mW; wavelength 273 nm; Aluminum gallium nitride; Light emitting diodes; Molecular beam epitaxial growth; Optical device fabrication; Power generation; Stimulated emission;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics (CLEO), 2011 Conference on
  • Conference_Location
    Baltimore, MD
  • Print_ISBN
    978-1-4577-1223-4
  • Type

    conf

  • Filename
    5950689
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2241972