DocumentCode
2242087
Title
Integration evaluation of low permittivity silicon based spin on materials as IMD
Author
Pires, F. ; Noël, P. ; Lecornec, Ch ; Passemard, G.
Author_Institution
CEA, Centre d´´Etudes Nucleaires de Grenoble, France
fYear
1997
fDate
16-19 March 1997
Firstpage
68
Lastpage
70
Abstract
The integration capability of non-etchback Silicon Based Spin on Materials has been studied. The via poisoning effect due to the resist stripping was particularly evaluated. The metal barrier adhesion and the dielectric constant evolution after the chemical treatment were also evaluated. Some solutions to integrate these materials were proposed.
Keywords
dielectric thin films; metallisation; permittivity; silicon compounds; chemical treatment; dielectric constant; integration; intermetal dielectric; metal barrier adhesion; permittivity; resist stripping; silicon based spin on material; via poisoning; Adhesives; Dielectric constant; Dielectric materials; Permittivity; Plasma applications; Plasma chemistry; Plasma materials processing; Plasma measurements; Resists; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Materials for Advanced Metallization, 1997. MAM '97 Abstracts Booklet., European Workshop
Conference_Location
Villard de Lans, France
ISSN
1266-0167
Type
conf
DOI
10.1109/MAM.1997.621062
Filename
621062
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