A compact SOI polarization beam splitter based on multimode interference coupler

Author

Tu, Z. ; Huang, Y.W. ; Yi, H.X. ; Wang, X.J. ; Li, Y.P. ; Li, L. ; Hu, W.W.

Author_Institution

State Key Lab. on Adv. Opt. Commun. Syst. & Networks, Peking Univ., Beijing, China

fYear

2011

fDate

13-16 Nov. 2011

Firstpage

1

Lastpage

6

Abstract

A multimode interference (MMI) polarization splitter with easy fabrication process was demonstrated in Silicon-On-Insulator substrate. The minimum device size, 8 μm×1034 μm was designed by Quasi-state imaging effect theory. Numerical simulations show that this optimized MMI polarization splitter has a good fabrication tolerance. The tolerance of width and length is ±0.04 μm and ± 10 μm for transverse electric (TE) mode and ±0.14 μm and ±35 μm for transverse magnetic (TM) mode. The bandwidths are 20 nm and 80 nm for TE and TM respectively. Experiment results exhibits a -15 dB polarization extinction ratio bandwidth of 20 nm for the through-path and much wider for the cross-path. The extinction ratio and crosstalk achieve (-27.3 dB, -22.6 dB) for TE and (-26.6 dB, -23.9 dB) for TM.

Keywords

light interference; light polarisation; numerical analysis; optical beam splitters; optical couplers; silicon-on-insulator; MMI polarization splitter; Si; compact SOI polarization beam splitter; multimode interference coupler; numerical simulations; quasistate imaging effect; silicon-on-insulator substrate; transverse electric mode; transverse magnetic mode; wavelength 20 nm; wavelength 80 nm; Abstracts; Dispersion; Equations; Erbium; Mathematical model; Multimode interferometer; Polarization beam splitter; Quasi-state imaging effect; Silicon-On-Insulator;

fLanguage

English

Publisher

ieee

Conference_Titel

Communications and Photonics Conference and Exhibition, 2011. ACP. Asia

Conference_Location

Shanghai

ISSN

2162-108X

Print_ISBN

978-0-8194-8961-6

Type

conf

DOI

10.1117/12.905589

Filename

6210622