AlGaN/GaN multiple quantum wells grown by atomic layer deposition

Author

Lo, M.H. ; Chen, S.W. ; Li, Z.Y. ; Lu, T.C. ; Kuo, H.C. ; Wang, S.C.

Author_Institution

Dept. of Photonics, Nat. Chiao Tung Univ., Hsinchu

fYear

2008

fDate

4-9 May 2008

Firstpage

1

Lastpage

2

Abstract

Three-pair AlGaN/GaN multiple quantum well structure with superlattice was grown using metal-organic chemical vapor deposition system. The AlGaN barrier and GaN well of the MQW were grown by atomic layer deposition and conventional growth, respectively.

Keywords

III-V semiconductors; MOCVD; aluminium compounds; atomic layer deposition; gallium compounds; semiconductor growth; semiconductor quantum wells; semiconductor superlattices; surface morphology; wide band gap semiconductors; AlGaN-GaN; atomic layer deposition; barrier layer; conventional growth; metal-organic chemical vapor deposition system; multiple quantum well structure; superlattice; surface morphology; Aluminum gallium nitride; Atomic layer deposition; Gallium nitride; Laser sintering; Metallic superlattices; Optical pumping; Optical sensors; Optical superlattices; Quantum well devices; Surface morphology; (250.5590) Quantum-well, -wire and -dot devices; (310.3840) Materials and process characterization;

fLanguage

English

Publisher

iet

Conference_Titel

Lasers and Electro-Optics, 2008 and 2008 Conference on Quantum Electronics and Laser Science. CLEO/QELS 2008. Conference on

Conference_Location

San Jose, CA

Print_ISBN

978-1-55752-859-9

Type

conf

Filename

4571715