Title :
Revealing subsurface defects in semiconductors using near-field fluorescence lifetime imaging
Author :
Bender, Daniel A. ; Sheik-Bahae, Mansoor
Author_Institution :
Opt. Sci. & Eng. Program, Univ. of New Mexico, Albuquerque, NM
Abstract :
Simultaneous near-field fluorescence lifetime imaging and atomic force microscopy identify radiative, interface and subsurface defect recombination sites in GaAs/GaInP heterostructures. Such unique characterization plays a significant role in identifying candidate samples for laser cooling.
Keywords :
III-V semiconductors; atomic force microscopy; gallium arsenide; gallium compounds; indium compounds; semiconductor heterojunctions; surface recombination; surface structure; GaAs-GaInP; atomic force microscopy; defect recombination sites; heterostructures; laser cooling; near-field fluorescence lifetime imaging; semiconductors; subsurface defects; Atom optics; Atomic force microscopy; Fluorescence; Gallium arsenide; Image edge detection; Luminescence; Optical microscopy; Optical surface waves; Radiative recombination; Surface morphology; 130.5990; 180.4243;
Conference_Titel :
Lasers and Electro-Optics, 2008 and 2008 Conference on Quantum Electronics and Laser Science. CLEO/QELS 2008. Conference on
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-55752-859-9
