• DocumentCode
    2242835
  • Title

    High Areal Density and Broadband Emission from InAs Quantum Dots for Superluminescent Diodes

  • Author

    Ngo, C.Y. ; Yoon, S.F. ; Fan, W.J. ; Chua, S.J.

  • Author_Institution
    Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore
  • fYear
    2007
  • fDate
    26-31 Aug. 2007
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    High areal density (1.4times1011 cm-1 ) and broad spectral width (136 nm) were obtained from the optimized InAs quantum dot sample. These results will contribute to an improvement in the performance of the current quantum dot superluminescent diodes.
  • Keywords
    III-V semiconductors; indium compounds; semiconductor quantum dots; superluminescent diodes; InAs; areal density; broad spectral width; broadband emission; current quantum dot superluminescent diodes; superluminescent diodes; Biomedical optical imaging; Gyroscopes; Land surface temperature; Light sources; Optical imaging; Optical modulation; Optical sensors; Quantum dots; Superluminescent diodes; Tomography;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics - Pacific Rim, 2007. CLEO/Pacific Rim 2007. Conference on
  • Conference_Location
    Seoul
  • Print_ISBN
    978-1-4244-1173-3
  • Electronic_ISBN
    978-1-4244-1174-0
  • Type

    conf

  • DOI
    10.1109/CLEOPR.2007.4391338
  • Filename
    4391338
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2242835