Highly efficient InGaN/GaN blue LED grown on Si (111) substrate

Author

Kim, Jun-Youn ; Tak, Yongjo ; Jae Won Lee ; Hong, Hyun-Gi ; Chae, Suhee ; Choi, Hyoji ; Min, Bokki ; Park, Youngsoo ; Kim, Minho ; Lee, Seongsuk ; Cha, Namgoo ; Shin, Yoonhee ; Jong-Ryeol Kim ; Shim, Jong-In

Author_Institution

Photo-Electron. Device Group, Samsung Adv. Inst. of Technol. (SALT), Suwon, South Korea

fYear

2011

fDate

1-6 May 2011

Firstpage

1

Lastpage

2

Abstract

For the first time, based on the high crystalline quality of n-GaN on Si template, highly efficient InGaN/GaN LEDs grown on 4-inch silicon substrates comparable to those on sapphire substrates have been successfully demonstrated. At driving current of 350 mA, the overall output power of 1 × 1 mm² LED chips exceeded 420 mW and forward voltage was 3.2 V under un-encapsulated condition, which is the best value among the reported values of blue LED grown on Si substrates. The internal quantum efficiency of 76% at injection current of 350 mAwas measured.

Keywords

III-V semiconductors; gallium compounds; indium compounds; light emitting diodes; semiconductor growth; silicon; wide band gap semiconductors; Si; current 350 mA; high crystalline quality; highly efficient blue LED grown; injection current; internal quantum efficiency; power 420 mW; sapphire substrates; unencapsulated condition; voltage 3.2 V; Epitaxial growth; Gallium nitride; Light emitting diodes; Power generation; Semiconductor device measurement; Silicon; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics (CLEO), 2011 Conference on

Conference_Location

Baltimore, MD

Print_ISBN

978-1-4577-1223-4

Type

conf

Filename

5950731