DocumentCode
2243107
Title
On the symmetry of efficiency-versus-carrier-concentration curves in GaInN/GaN light-emitting diodes and relation to droop-causing mechanisms
Author
Dai, Qi ; Shan, Qifeng ; Cho, Jaehee ; Schubert, E.Fred ; Crawford, Mary H. ; Koleske, Daniel D. ; Kim, Min-Ho ; Park, YongJo
Author_Institution
Dept. of Phys., Appl. Phys. & Astron., Rensselaer Polytech. Inst., Troy, NY, USA
fYear
2011
fDate
1-6 May 2011
Firstpage
1
Lastpage
2
Abstract
The ABC model (without and with phase-space filling) predicts IQE-versus-n curves of GalnN light-emitting diodes that have even symmetry. Analysis of IQE-versus-n curves shows the need for a carrier leakage term to explain the droop.
Keywords
III-V semiconductors; gallium compounds; light emitting diodes; quantum well devices; semiconductor quantum dots; wide band gap semiconductors; GaInN-GaN; carrier leakage term; droop-causing mechanisms; efficiency-versus-carrier-concentration curves; light-emitting diodes; Filling; Fitting; Light emitting diodes; Modeling; Physics; Predictive models; USA Councils;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics (CLEO), 2011 Conference on
Conference_Location
Baltimore, MD
Print_ISBN
978-1-4577-1223-4
Type
conf
Filename
5950733
Link To Document