DocumentCode
2243475
Title
Complete nonlinear model for the MRC (MOS resistive circuit)
Author
Vidal, E. ; Porta, S. ; Martínez, H. ; Alarc, E. ; Poveda, A.
Author_Institution
Dept. d´´Enginyeria Electron., Univ. Politecnica de Catalunya, Barcelona, Spain
Volume
1
fYear
2000
fDate
2000
Firstpage
140
Abstract
The most significant sources of nonlinearity in the MOS resistive circuit behaviour are identified and deeply analysed in this contribution. Their influence on the MRC performance and, therefore, in the circuits containing such structure is evidenced through some examples and evaluated. Some reasonable hints about the way to minimise their undesired effects are provided
Keywords
MOSFET circuits; circuit tuning; nonlinear network analysis; MOS resistive circuit; MRC; nonlinear model; undesired effects; Circuit topology; Coupling circuits; Degradation; Joining processes; Linearity; MOSFET circuits; Operational amplifiers; Proposals; Resistors; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems, 2000. Proceedings. ISCAS 2000 Geneva. The 2000 IEEE International Symposium on
Conference_Location
Geneva
Print_ISBN
0-7803-5482-6
Type
conf
DOI
10.1109/ISCAS.2000.857046
Filename
857046
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