DocumentCode
2243507
Title
A universal analytic charge injection model
Author
Ding, Yongwang ; Harjani, Ramesh
Author_Institution
Dept. of Electr. & Comput. Eng., Minnesota Univ., Minneapolis, MN, USA
Volume
1
fYear
2000
fDate
2000
Firstpage
144
Abstract
In this paper we present an analytical model for charge injection in MOS switches that is valid for all regions of operation. The model is general and can be applied for different load conditions. We analyze and develop two separate charge injection models for the different operating conditions. A simple continuous model that is valid for all conditions is then stitched together using appropriate functions. Simulation results from this model agree well with previously published measurement results. The model is used to predict charge injection error and nonlinearity
Keywords
MOSFET circuits; circuit simulation; field effect transistor switches; sampled data circuits; semiconductor device models; MOS switches; continuous model; load conditions; nonlinearity; operating conditions; simulation results; universal analytic charge injection model; Analytical models; Capacitance; Circuit simulation; Clocks; Equations; MOS devices; Numerical simulation; Predictive models; Switches; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems, 2000. Proceedings. ISCAS 2000 Geneva. The 2000 IEEE International Symposium on
Conference_Location
Geneva
Print_ISBN
0-7803-5482-6
Type
conf
DOI
10.1109/ISCAS.2000.857047
Filename
857047
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