DocumentCode
2243514
Title
W CMP process integration
Author
Sicurani, E. ; Fayolle, M. ; Gobil, Y. ; Morand, Y.
Author_Institution
CEA, Centre d´´Etudes Nucleaires de Grenoble, France
fYear
1997
fDate
16-19 March 1997
Firstpage
86
Lastpage
87
Abstract
As integrated circuit devices continue to scale towards smaller geometry, the requirements imposed on the advanced metallization become increasingly stringent: high degree of planarity, low defectivity level, high device yield. Since etch back tungsten introduces many particles and recess, tungsten CMP appears as a very promising technology for new generation of ULSI devices. This work reports a characterisation of W CMP process using different slurries.
Keywords
integrated circuit metallisation; polishing; tungsten; ULSI device; W; chemical mechanical polishing; defectivity; integrated circuit; metallization; planarity; process integration; slurry; tungsten; yield; Etching; Geometry; Inorganic materials; Metallization; Plugs; Research and development; Semiconductor films; Slurries; Temperature; Tungsten;
fLanguage
English
Publisher
ieee
Conference_Titel
Materials for Advanced Metallization, 1997. MAM '97 Abstracts Booklet., European Workshop
Conference_Location
Villard de Lans, France
ISSN
1266-0167
Type
conf
DOI
10.1109/MAM.1997.621068
Filename
621068
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