Title :
W CMP process integration
Author :
Sicurani, E. ; Fayolle, M. ; Gobil, Y. ; Morand, Y.
Author_Institution :
CEA, Centre d´´Etudes Nucleaires de Grenoble, France
Abstract :
As integrated circuit devices continue to scale towards smaller geometry, the requirements imposed on the advanced metallization become increasingly stringent: high degree of planarity, low defectivity level, high device yield. Since etch back tungsten introduces many particles and recess, tungsten CMP appears as a very promising technology for new generation of ULSI devices. This work reports a characterisation of W CMP process using different slurries.
Keywords :
integrated circuit metallisation; polishing; tungsten; ULSI device; W; chemical mechanical polishing; defectivity; integrated circuit; metallization; planarity; process integration; slurry; tungsten; yield; Etching; Geometry; Inorganic materials; Metallization; Plugs; Research and development; Semiconductor films; Slurries; Temperature; Tungsten;
Conference_Titel :
Materials for Advanced Metallization, 1997. MAM '97 Abstracts Booklet., European Workshop
Conference_Location :
Villard de Lans, France
DOI :
10.1109/MAM.1997.621068