DocumentCode
2243787
Title
Power MOSFET temperature measurements
Author
Blackburn, David ; Berning, David
Author_Institution
National Bureau of Standards, Washington, DC 20234
fYear
1982
fDate
14-17 June 1982
Firstpage
400
Lastpage
407
Abstract
Three temperature-sensitive electrical parameters are compared as thermometers for power MOSFET devices. The parameters are the forward drain-body diode voltage, the source-gate voltage, and the on-resistance. The results are also compared with temperatures measured with an infrared microradiometer. The procedure, apparatus, and circuits required to use each of the parameters as a thermometer are described. Some general considerations for measuring the temperature of power semiconductor devices are also discussed. Each parameter is found to be satisfactory for measuring the temperature of power MOSFETs. The sourcegate voltage measures a temperature nearest to the peak device temperature, and the drain-body diode voltage shows the least variation in calbiration from device to device.
Keywords
Calibration; Current measurement; MOSFET; Semiconductor device measurement; Temperature measurement; Temperature sensors; Voltage measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Electronics Specialists conference, 1982 IEEE
Conference_Location
Cambridge, MA, USA
ISSN
0275-9306
Type
conf
DOI
10.1109/PESC.1982.7072436
Filename
7072436
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