DocumentCode :
2243906
Title :
High Speed Silicon optical modulators
Author :
Reed, G.T. ; Thomson, D. ; Gardes, F.Y. ; Emerson, N.G. ; Fédéli, J-M
Author_Institution :
Adv. Technol. Inst., Univ. of Surrey, Guildford, UK
fYear :
2011
fDate :
13-16 Nov. 2011
Firstpage :
1
Lastpage :
7
Abstract :
In this paper we describe two silicon based optical modulators that have been fabricated as part of two projects in which the Surrey group is involved, the “UK Silicon Photonics project” funded by the UK Engineering and Physical Sciences Research Council (EPSRC), and the European “HELIOS” project funded by the European Union. The modulators exploit the carrier depletion effect in MZI structures, but have different advantages and disadvantages. One has a performance that is close to polarisation independence, whilst the other demonstrates a very high extinction ratio for a 40Gb/s silicon modulator. Both are shown to operate at 40Gb/s.
Keywords :
elemental semiconductors; optical modulation; silicon; EPSRC; European HELIOS project; European Union; Si; Surrey group; UK Engineering and Physical Sciences Research Council; UK Silicon Photonics project; bit rate 40 Gbit/s; high speed optical modulators; Abstracts; Europe; High speed optical techniques; Optical device fabrication; Optical polarization; Photonics; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Communications and Photonics Conference and Exhibition, 2011. ACP. Asia
Conference_Location :
Shanghai
ISSN :
2162-108X
Print_ISBN :
978-0-8194-8961-6
Type :
conf
DOI :
10.1117/12.902767
Filename :
6210694
Link To Document :
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