Dual-depletion-region lumped electroabsorption modulator for low capacitance and expected high bandwidth

Author

Shao, Yongbo ; Zhao, Lingjuan ; Yu, Hongyan ; Pan, Jiaoqing ; Wang, Baojun ; Zhu, Hongliang ; Wang, Wei

Author_Institution

Key Lab. of Semicond. Mater. Sci., Inst. of Semicond., Beijing, China

fYear

2011

fDate

13-16 Nov. 2011

Firstpage

1

Lastpage

7

Abstract

A dual-depletion-region lumped electroabsorption modulator (DDR-LEAM) based on InP at 1550nm is designed and fabricated. The measurement results reveal that the dual depletion region structure can reduce the device capacitance significantly without any degradation of extinction ratio. The simulation results show that the highly doped charge layer can concentrate almost all of the external applied voltage in MQW region and thus contribute to the identical extinction ratio curves. The expected 3-dB bandwidth of the DDR-LEAMs using an equivalent circuit model is more than twice lager than that of the conventional LEAM.

Keywords

III-V semiconductors; capacitance; electro-optical modulation; electroabsorption; equivalent circuits; extinction coefficients; indium compounds; optical design techniques; optical fabrication; quantum well devices; semiconductor quantum wells; DDR-LEAM; InP; MQW; device capacitance; dual depletion region structure; dual-depletion-region lumped electroabsorption modulator; equivalent circuit model; external applied voltage; extinction ratio; highly doped charge layer; wavelength 1550 nm; Abstracts; Bandwidth; Capacitance; Impedance; Quantum well devices; bandwidth; dual depletion region(DDR); electroabsorption modulator(EAM); equivalent circuit model; quantum confined stark effect;

fLanguage

English

Publisher

ieee

Conference_Titel

Communications and Photonics Conference and Exhibition, 2011. ACP. Asia

Conference_Location

Shanghai

ISSN

2162-108X

Print_ISBN

978-0-8194-8961-6

Type

conf

DOI

10.1117/12.903970

Filename

6210697