Title :
Planar aluminium multilevel interconnection formed by electrochemical anodizing technique
Author :
Surganov, V. ; Mozalev, A.
Author_Institution :
Dept. of Microelectron., Belarussian State Univ. of Inf. & Radioelectron., Minsk, Belarus
Abstract :
This report describes a multilevel inter-connection technology based on selective electrochemical anodizing of aluminium and its alloys. In accordance with this technology, local areas into Al layer are transformed to insulating anodic alumina by low temperature electrochemical oxidation. Selective anodizing technique provides possibility to produce following components of planar multilevel inter-connections.
Keywords :
aluminium; anodisation; electrochemistry; integrated circuit interconnections; integrated circuit metallisation; oxidation; Al; electrochemical anodization; insulating alumina; planar aluminium multilevel interconnection; selective oxidation; Aluminum; Conducting materials; Dielectric materials; Manufacturing processes; Metallization; Microelectronics; Planarization; Plasma applications; Plasma chemistry; Plasma materials processing;
Conference_Titel :
Materials for Advanced Metallization, 1997. MAM '97 Abstracts Booklet., European Workshop
Conference_Location :
Villard de Lans, France
DOI :
10.1109/MAM.1997.621070
