Total Dose and Transient Response of SiGe HBTs from a New 4th-Generation, 90 nm SiGe BiCMOS Technology

Author

Lourenco, Nelson E. ; Schmid, Robert L. ; Moen, Kurt A. ; Phillips, Stanley D. ; England, Troy D. ; Cressler, John D. ; Pekarik, John ; Adkisson, James ; Camillo-Castillo, Renata ; Cheng, Peng ; Monaghan, John Ellis ; Gray, Peter ; Harame, David ; Khater,

Author_Institution

Dept. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA

fYear

2012

fDate

16-20 July 2012

Firstpage

1

Lastpage

5

Abstract

The total ionizing dose and laser-induced transient response of a new 4th generation 90 nm IBM SiGe 9HP technology are investigated. Total dose testing was performed with 63.3 MeV protons at the Crocker Nuclear Laboratory at the University of California, Davis. Transient testing was performed on the two-photon absorption system at Naval Research Laboratory. Results show that the SiGe HBTs are dose-tolerant up to 3 Mrad(SiO₂) and exhibit reduced single event transients compared to earlier SiGe generations.

Keywords

BiCMOS integrated circuits; Ge-Si alloys; heterojunction bipolar transistors; laser materials processing; radiation hardening (electronics); semiconductor device testing; transient response; BiCMOS technology; HBT; SiGe; electron volt energy 63.3 MeV; fourth generation IBM 9HP technology; laser-induced transient response; size 90 nm; total ionizing dose testing; transient testing; two-photon absorption system; Current measurement; Heterojunction bipolar transistors; Measurement by laser beam; Protons; Silicon germanium; Testing; Transient analysis;

fLanguage

English

Publisher

ieee

Conference_Titel

Radiation Effects Data Workshop (REDW), 2012 IEEE

Conference_Location

Tucson, AZ

ISSN

2154-0519

Print_ISBN

978-1-4673-2730-5

Type

conf

DOI

10.1109/REDW.2012.6353734

Filename

6353734