Title :
Total Dose and Transient Response of SiGe HBTs from a New 4th-Generation, 90 nm SiGe BiCMOS Technology
Author :
Lourenco, Nelson E. ; Schmid, Robert L. ; Moen, Kurt A. ; Phillips, Stanley D. ; England, Troy D. ; Cressler, John D. ; Pekarik, John ; Adkisson, James ; Camillo-Castillo, Renata ; Cheng, Peng ; Monaghan, John Ellis ; Gray, Peter ; Harame, David ; Khater,
Author_Institution :
Dept. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
Abstract :
The total ionizing dose and laser-induced transient response of a new 4th generation 90 nm IBM SiGe 9HP technology are investigated. Total dose testing was performed with 63.3 MeV protons at the Crocker Nuclear Laboratory at the University of California, Davis. Transient testing was performed on the two-photon absorption system at Naval Research Laboratory. Results show that the SiGe HBTs are dose-tolerant up to 3 Mrad(SiO2) and exhibit reduced single event transients compared to earlier SiGe generations.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; heterojunction bipolar transistors; laser materials processing; radiation hardening (electronics); semiconductor device testing; transient response; BiCMOS technology; HBT; SiGe; electron volt energy 63.3 MeV; fourth generation IBM 9HP technology; laser-induced transient response; size 90 nm; total ionizing dose testing; transient testing; two-photon absorption system; Current measurement; Heterojunction bipolar transistors; Measurement by laser beam; Protons; Silicon germanium; Testing; Transient analysis;
Conference_Titel :
Radiation Effects Data Workshop (REDW), 2012 IEEE
Conference_Location :
Tucson, AZ
Print_ISBN :
978-1-4673-2730-5
DOI :
10.1109/REDW.2012.6353734
