Title :
Rebound Testing of Intersil Bipolar and BiCMOS Parts
Author :
van Vonno, N.W. ; Knudsen, K. ; Hood, R. ; Mansilla, O. ; Bernard, T.M. ; Chesley, P.J.
Author_Institution :
High Reliability Products, Intersil Corp., Palm Bay, FL, USA
Abstract :
We report the results of high temperature accelerated aging (´rebound´) testing of the Intersil ISL75051SRH low dropout regulator and the Intersil ISL70417SRH quad operational amplifier. These post-irradiation anneals were performed at 100°C under bias for a total of 168 hours, after biased and unbiased high dose rate 60Co irradiation. The product types were selected as representative samples of a power management BiCMOS and a complementary bipolar SOI process, respectively. We also include a brief discussion of the parts´ electrical specifications and wafer fabrication process.
Keywords :
BiCMOS integrated circuits; ageing; annealing; cobalt; life testing; operational amplifiers; radiation hardening (electronics); semiconductor device testing; silicon-on-insulator; voltage regulators; Co; Intersil ISL70417SRH quad operational amplifier; Intersil ISL75051SRH low dropout regulator; Intersil bipolar rebound testing; complementary bipolar SOI process; high temperature accelerated aging testing; post-irradiation annealling; power management BiCMOS parts; temperature 100 degC; time 168 hour; unbiased high dose rate irradiation; wafer fabrication process; Accelerated aging; Annealing; BiCMOS integrated circuits; Radiation effects; Temperature control; Voltage control;
Conference_Titel :
Radiation Effects Data Workshop (REDW), 2012 IEEE
Conference_Location :
Tucson, AZ
Print_ISBN :
978-1-4673-2730-5
DOI :
10.1109/REDW.2012.6353736
