DocumentCode
2245406
Title
Three DFM Challenges: Random Defects, Thickness Variation, and Printability Variation
Author
Chiang, Charles ; Kawa, Jamil
Author_Institution
Synopsys, Inc., Mountain View, CA
fYear
2006
fDate
4-7 Dec. 2006
Firstpage
1099
Lastpage
1102
Abstract
Since the onset of the 90 nm node the challenges associated with further transistor scaling while maintaining a consistently functional, reliable, and yielding design has increased exponentially. While those challenges carry across the spectrum of the manufacturing stages we believe it is the responsibility and the goal of the EDA industry to deal with those issues as thoroughly and as seamlessly as possible to make those challenges transparent to the designer. In this paper we expose and analyze three major DFM challenges: random defects, metal and oxide thickness (z) variation, and printability (x-y) variation. We also briefly go over the solutions EDA tools are offering for dealing with them. The solutions covered are wire spreading and wire widening for random defects, model based dummy fill for thickness variation, and printability solutions for printability variation
Keywords
design for manufacture; integrated circuit yield; nanoelectronics; 90 nm; DFM challenges; design for manufacturability; dummy fill; metal thickness variation; oxide thickness variation; printability variation; random defects; transistor scaling; wire spreading; wire widening; Contamination; Copper; Design for manufacture; Electronic design automation and methodology; Lithography; Manufacturing; Optical distortion; Optical sensors; Semiconductor device modeling; Wire;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems, 2006. APCCAS 2006. IEEE Asia Pacific Conference on
Conference_Location
Singapore
Print_ISBN
1-4244-0387-1
Type
conf
DOI
10.1109/APCCAS.2006.342313
Filename
4145589
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