• DocumentCode
    2245406
  • Title

    Three DFM Challenges: Random Defects, Thickness Variation, and Printability Variation

  • Author

    Chiang, Charles ; Kawa, Jamil

  • Author_Institution
    Synopsys, Inc., Mountain View, CA
  • fYear
    2006
  • fDate
    4-7 Dec. 2006
  • Firstpage
    1099
  • Lastpage
    1102
  • Abstract
    Since the onset of the 90 nm node the challenges associated with further transistor scaling while maintaining a consistently functional, reliable, and yielding design has increased exponentially. While those challenges carry across the spectrum of the manufacturing stages we believe it is the responsibility and the goal of the EDA industry to deal with those issues as thoroughly and as seamlessly as possible to make those challenges transparent to the designer. In this paper we expose and analyze three major DFM challenges: random defects, metal and oxide thickness (z) variation, and printability (x-y) variation. We also briefly go over the solutions EDA tools are offering for dealing with them. The solutions covered are wire spreading and wire widening for random defects, model based dummy fill for thickness variation, and printability solutions for printability variation
  • Keywords
    design for manufacture; integrated circuit yield; nanoelectronics; 90 nm; DFM challenges; design for manufacturability; dummy fill; metal thickness variation; oxide thickness variation; printability variation; random defects; transistor scaling; wire spreading; wire widening; Contamination; Copper; Design for manufacture; Electronic design automation and methodology; Lithography; Manufacturing; Optical distortion; Optical sensors; Semiconductor device modeling; Wire;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Circuits and Systems, 2006. APCCAS 2006. IEEE Asia Pacific Conference on
  • Conference_Location
    Singapore
  • Print_ISBN
    1-4244-0387-1
  • Type

    conf

  • DOI
    10.1109/APCCAS.2006.342313
  • Filename
    4145589