Title :
Total Ionizing Dose and Single Event Latch-Up Characterization of a 16-Bit A-to-D Converter Fabricated in 0.18µm Triple-Well CMOS Process
Author :
Zanchi, Alfio ; Hisano, Shinichi ; Hafer, Craig ; Kerwin, David B.
Author_Institution :
Aeroflex Colorado Springs, Colorado Springs, CO, USA
Abstract :
A radiation-hardened 16-bit CMOS pipeline Analog-to-Digital Converter operated at 10 MSamples per second (MSps) has been tested with 60Cobalt for Total Ionizing Dose (TID) in five different operating modes - static and dynamic. The built-in bandgap reference showed <;130 mV output voltage shifts, and the ADC as a whole incurred minimal performance variations versus TID, maintaining up to 74.1 dBFS Signal-to-Noise Ratio (SNR) and 92 dBc Spurious-Free Dynamic Range (SFDR) up to 2 Mrad(Si). Selected converter blocks had previously exhibited Single Event Latch-up (SEL) immunity up to an LET level of 121 MeV·cm2/mg with Au ions. The SEL immunity of the whole ADC up to the same LET level was also confirmed after running a series of heavy-ion tests with the converter operating in all of its static and dynamic modes.
Keywords :
CMOS integrated circuits; analogue-digital conversion; A-to-D converter; ADC; LET level; SEL immunity; SFDR; SNR; TID; built-in bandgap reference; dynamic modes; heavy-ion tests; minimal performance variations; radiation-hardened pipeline analog-to-digital converter; signal-to-noise ratio; single event latch-up characterization; size 0.18 mum; spurious-free dynamic range; static modes; total ionizing dose; triple-well CMOS process; word length 16 bit; Aerodynamics; CMOS integrated circuits; Clocks; Ions; Photonic band gap; Power demand; System-on-a-chip;
Conference_Titel :
Radiation Effects Data Workshop (REDW), 2012 IEEE
Conference_Location :
Tucson, AZ
Print_ISBN :
978-1-4673-2730-5
DOI :
10.1109/REDW.2012.6353737
