Title :
A Low-power 4-T SAM Design for OFDM Demodulators in DVB Receiversers
Author :
Wang, Chua-Chin ; Sung, Gang-Neng ; Chang, Ming-Kai ; Lee, Ching-Li ; Wu, Cheng-Mu ; Chen, Ju-Ya
Author_Institution :
Dept. of Electr. Eng., Nat. Sun Yat-Sen Univ., Kaohsiung
Abstract :
This paper describes the design and implementation of a sequential access memory (SAM) in the OFDM demodulator of DVB-T receivers. The SAM decoder is based upon a ring counter to reduce the transistor count as well as the number of transitions per memory access. The SAM cell takes advantage of a negative word-line scheme to minimize the leakage current of the cell access transistors. The power consumption of memory access is then reduced. A 2-Kb SAM is carried out by 0.18 mum 1P6M CMOS process to verify the proposed design. The average power dissipation of the address decoder is 41.97 muW, while the average power dissipation of the overall SAM is 4.11 mW given a 20 MHz clock rate
Keywords :
CMOS integrated circuits; OFDM modulation; codecs; demodulators; digital video broadcasting; television receivers; 0.18 micron; 2 kbit; 20 MHz; 4.11 mW; 41.97 muW; CMOS process; DVB-T receivers; OFDM demodulators; SAM decoder; SAM design; cell access transistors; leakage current; negative word-line scheme; power consumption; ring counter; sequential access memory; CMOS process; Clocks; Counting circuits; Decoding; Demodulation; Digital video broadcasting; Energy consumption; Leakage current; OFDM; Power dissipation; 4-T cell; DVB-T; SAM; negative word-line; ring;
Conference_Titel :
Circuits and Systems, 2006. APCCAS 2006. IEEE Asia Pacific Conference on
Conference_Location :
Singapore
Print_ISBN :
1-4244-0387-1
DOI :
10.1109/APCCAS.2006.342316
