Title :
Bright photoluminescence from GaAs and InGaAs nanoneedles grown on Si substrates
Author :
Moewe, Michael ; Chuang, Linus C. ; Crankshaw, Shanna ; Chang-Hasnain, Connie
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Univ. of California at Berkeley, Berkeley, CA
Abstract :
We report novel single-crystalline (In)GaAs nanoneedles with 2~5 nm tips, smooth 6-9deg taper angles and lengths up to 3-4 mum, grown aligned to [111] orientation on Si substrates. Bright photoluminescence is obtained from quantum-well nanoneedles.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; nanostructured materials; optical materials; photoluminescence; semiconductor growth; semiconductor quantum wells; GaAs; InGaAs; Si; photoluminescence; quantum-well nanoneedles; size 3 mum to 4 mum; Gallium arsenide; III-V semiconductor materials; Indium gallium arsenide; Nanowires; Needles; Optical surface waves; Photoluminescence; Rough surfaces; Substrates; Surface roughness; (160.4760) Optical properties; (160.6000) Semiconductor materials;
Conference_Titel :
Lasers and Electro-Optics, 2008 and 2008 Conference on Quantum Electronics and Laser Science. CLEO/QELS 2008. Conference on
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-55752-859-9
