Title :
Self-aligned planar GaAs nanowires grown by MOCVD on GaAs (100) substrates
Author :
Fortuna, Seth A. ; Zeng, Xi ; Li, Xiuling
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Illinois at Urbana-Champaign, Urbana, IL
Abstract :
The growth of self-aligned planar GaAs nanowires on GaAs (100) substrates is demonstrated using Au-catalyzed metalorganic chemical vapor deposition (MOCVD). The effect of growth temperature on nanowire orientation and the growth mechanism are discussed.
Keywords :
III-V semiconductors; MOCVD; catalysts; gallium arsenide; gold; nanowires; semiconductor growth; GaAs; MOCVD; growth mechanism; growth temperature; metalorganic chemical vapor deposition; nanowire orientation; self-aligned planar GaAs nanowires; Epitaxial growth; Gallium arsenide; Gold; MOCVD; Morphology; Nanowires; Scanning electron microscopy; Semiconductor laser arrays; Substrates; Temperature; (160.4236) Nanomaterials; (160.6000) Semiconductor materials;
Conference_Titel :
Lasers and Electro-Optics, 2008 and 2008 Conference on Quantum Electronics and Laser Science. CLEO/QELS 2008. Conference on
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-55752-859-9
