Title :
Growth of GaAs whiskers by MBE on LPCVD Si(111) nanowire trunks
Author :
Andrews, Aaron Maxwell ; Klang, P. ; Lugstein, Alois ; Schrambock, Matthias ; Steinmair, Mathias ; Hyun, Youn-Joo ; Bertagnolli, Emmerich ; Zauner, Christoph ; Unterrainer, K. ; Schrenk, Werner ; Strasser, Gottfried
Author_Institution :
Center for Micro- & Nanostruct., Vienna Univ. of Technol., Vienna
Abstract :
We present the heteroepitaxial growth of wurtzite GaAs nanowhiskers on Si(111)-nanowire trunks forming hierarchical star-like structures with a six-fold symmetry, grown in the [0001] direction perpendicular to the Si-NW {112} facets.
Keywords :
III-V semiconductors; chemical vapour deposition; gallium arsenide; molecular beam epitaxial growth; optical materials; semiconductor growth; silicon; whiskers (crystal); GaAs; GaAs whiskers; LPCVD; MBE; Si; Si nanowire trunks; heteroepitaxial growth; CMOS technology; Epitaxial growth; Epitaxial layers; Gallium arsenide; Gold; III-V semiconductor materials; Luminescence; Molecular beam epitaxial growth; Photonics; Substrates; (160.4236) Nanomaterials; (160.6000) Semiconductor materials;
Conference_Titel :
Lasers and Electro-Optics, 2008 and 2008 Conference on Quantum Electronics and Laser Science. CLEO/QELS 2008. Conference on
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-55752-859-9
