DocumentCode
2245630
Title
Broad angular and spectral anti-reflection employing GaN nano-pillar structures
Author
Chiu, C.H. ; Yu, Peichen ; Chen, C.C. ; Kuo, H.C. ; Lu, T.C. ; Wang, S.C. ; Hsu, S.S. ; Cheng, Y.-J. ; Chang, Y.C.
Author_Institution
Dept. of Photonics & Inst. of Electro-Opt. Eng., Nat. Chiao-Tung Univ., Hsinchu
fYear
2008
fDate
4-9 May 2008
Firstpage
1
Lastpage
2
Abstract
Angular and spectral reflectivities of GaN nano-pillar structures are investigated for heights of 350 nm, 550 nm and 720 nm. Calculations based on rigorous coupled-wave analysis show excellent agreement with the measured reflectivities for s- and p-polarizations.
Keywords
III-V semiconductors; antireflection coatings; gallium compounds; light polarisation; nanostructured materials; reflectivity; wide band gap semiconductors; GaN; broad angular reflectivities; coupled-wave analysis; nanopillar structures; p-polarization; s-polarization; size 350 nm; size 550 nm; size 720 nm; spectral antireflection; Etching; Gallium nitride; Nanostructures; Optical coupling; Optical polarization; Optical surface waves; Photonics; Reflectivity; Silicon; Wavelength measurement; 220.4241; 310.6860;
fLanguage
English
Publisher
iet
Conference_Titel
Lasers and Electro-Optics, 2008 and 2008 Conference on Quantum Electronics and Laser Science. CLEO/QELS 2008. Conference on
Conference_Location
San Jose, CA
Print_ISBN
978-1-55752-859-9
Type
conf
Filename
4571849
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