Title :
Photovoltage spectroscopy and electroluminescence of ZnSe/CdxZn1-xSe superlattices
Author :
Agafonov, E.N. ; Georgobiani, A.N. ; Lepnev, L.S. ; Sadofyev, Yu.G.
Author_Institution :
P.N. Lebedev Phys. Inst., Acad. of Sci., Moscow, Russia
Abstract :
The ZnSe/CdxZn1-xSe superlattices with non-doping layers, grown by molecular beam epitaxy, were investigated by electroluminescence and photovoltage spectroscopy. Green-blue electroluminescence from the quantum wells has been observed at 77 K and 293 K. Well-resolved peaks attributed to excitonic absorption, as well as photosensitivity bands corresponding to the CdxZn1-xSe/ZnSe superlattice region and the ZnSe buffer layer, have been observed in photovoltaic measurements.
Keywords :
II-VI semiconductors; band structure; cadmium compounds; electroluminescence; excitons; photoelectron spectra; semiconductor superlattices; zinc compounds; 293 K; 77 K; ZnSe-CdZnSe; ZnSe/CdxZn1-xSe superlattices; electroluminescence; energy-band structure; excitonic absorption; green-blue EL; molecular beam epitaxy; nondoping layers; photosensitivity bands; photovoltage spectroscopy; photovoltaic measurements; Buffer layers; Electroluminescence; Gold; Molecular beam epitaxial growth; Optical buffering; Optical superlattices; Spectroscopy; Substrates; Temperature; Zinc compounds;
Conference_Titel :
Nanotechnology, 2002. IEEE-NANO 2002. Proceedings of the 2002 2nd IEEE Conference on
Print_ISBN :
0-7803-7538-6
DOI :
10.1109/NANO.2002.1032221
