• DocumentCode
    2245741
  • Title

    Techniques and methods for the simulation of nanoscale ballistic MOSFETs

  • Author

    Iannaccone, G. ; Fiori, G. ; Curatola, G.

  • Author_Institution
    Dipt. di Ingegneria dell´´Informazione, Pisa Univ., Italy
  • fYear
    2002
  • fDate
    2002
  • Firstpage
    193
  • Lastpage
    196
  • Abstract
    In this paper, we present the methods and the techniques we use for performing the simulation of nanoscale ballistic MOSFETs in bulk silicon, silicon on insulator, and silicon-germanium. Results for typical structures with channel length of 25 nm are presented.
  • Keywords
    MOSFET; ballistic transport; elemental semiconductors; germanium; nanoelectronics; semiconductor device models; silicon; silicon-on-insulator; SOI; Si-Ge; bulk Si; channel length; nanoscale ballistic MOSFETs; simulation; Electrons; Germanium silicon alloys; MOSFETs; Monte Carlo methods; Particle scattering; Phonons; Poisson equations; Potential well; Silicon germanium; Silicon on insulator technology;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nanotechnology, 2002. IEEE-NANO 2002. Proceedings of the 2002 2nd IEEE Conference on
  • Print_ISBN
    0-7803-7538-6
  • Type

    conf

  • DOI
    10.1109/NANO.2002.1032223
  • Filename
    1032223
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2245741