Effects of sub-gate bias on the operation of Schottky-barrier SOI MOSFETs having nano-scale channel

Author

Lin, Homg-Chih ; Wang, Meng-Fan ; Hou, Fu-Ju ; Liu, Jan-Tsai ; Li, Yiming ; Huang, Tiao-Yuan ; Sze, Simon M.

Author_Institution

Nat. Nano Device Labs, Hsin-Chu, Taiwan

fYear

2002

fDate

2002

Firstpage

205

Lastpage

208

Abstract

The characteristics of a novel nano-scale silicon-on-insulator (SOI) device featuring silicide Schottky source/drain and field-induced S/D extensions induced by a sub-gate were investigated. The new device exhibits unique and high-performance bi-channel operation capability. In this work, particular attention was paid to the effects of subgate bias on the device operation. It is shown that the applied sub-gate voltage not only increases the on-state current, but also effectively suppresses the off-state leakage. Extremely high on/off current ratio (>10⁹) has thus been obtained. Dependences of sub-gate bias on sub-threshold swing and threshold-voltage roll-off characteristics were also explored.

Keywords

MOSFET; Schottky gate field effect transistors; leakage currents; nanoelectronics; silicon-on-insulator; Schottky-barrier SOI MOSFETs; high-performance bi-channel operation capability; nano-scale channel; nano-scale silicon-on-insulator device; on-state current; sub-gate bias; sub-threshold swing; threshold-voltage roll-off characteristics; Annealing; CMOS process; Contacts; Fabrication; MOSFETs; Manufacturing; Nanoscale devices; Passivation; Silicides; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanotechnology, 2002. IEEE-NANO 2002. Proceedings of the 2002 2nd IEEE Conference on

Print_ISBN

0-7803-7538-6

Type

conf

DOI

10.1109/NANO.2002.1032226

Filename

1032226