DocumentCode
2245798
Title
Design and analysis of a high speed operational amplifier made by 60 nm gate-length MOSFETs
Author
Cheng, J. ; Jiang, J.F. ; Cai, Q.Y.
Author_Institution
Res. Inst. of Micro, Shanghai Jiao Tong Univ., China
fYear
2002
fDate
2002
Firstpage
209
Lastpage
212
Abstract
In this paper, a high speed operational amplifier (op amp) with 60 nm gate length MOSFET (nano-MOSFET) is presented. Cascode input stage is implemented to improve frequency response. After verifying the availability of cascode form in designing high speed op amp via SPICE model, we give simulation results to prove the speed of cascode op amp has no advantage compared with simple two-stage op amp in this ultra-short channel occasion. Our simulation also suggest it is important to choose transistor parameter, as small output resistance can severely deteriorate circuit performance.
Keywords
MOSFET; SPICE; nanoelectronics; operational amplifiers; semiconductor device models; 60 nm; 60 nm gate-length MOSFETs; SPICE model; cascode input stage; frequency response; high speed operational amplifier; simulation results; Analog circuits; Availability; Capacitance; Circuit simulation; Doping; MOSFETs; Operational amplifiers; SPICE; Semiconductor device modeling; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Nanotechnology, 2002. IEEE-NANO 2002. Proceedings of the 2002 2nd IEEE Conference on
Print_ISBN
0-7803-7538-6
Type
conf
DOI
10.1109/NANO.2002.1032227
Filename
1032227
Link To Document