Title :
Fundamental aspects in bumping and via filling electrodeposition
Author_Institution :
Dept. of Appl. Chem., Okayama Univ., Japan
Abstract :
Fundamental aspects in bumping and via filling will be addressed. A detailed mechanism of copper via filling will be emphasised. Copper Damascene via bottom accelerating additives was investigated by patterned cathode of cathode only at via bottom. With SPS in addition to Cl, PEG and JGB, the current of via bottom cathode increases. This current also increases with an increase in SPS concentration. This accelerating effect of SPS was found with typical combination of four additives (Cl+PEG+JGB+SPS) used for via filling. The current increases with an increase in aspect ratios of patterned cathode. With higher aspect ratio of deeper via, the via bottom accelerating substance must be accumulated at via bottom. This substance is related to SPS. From the cross section observation of deposit thickness, this via bottom accelerating substance must form during electrolysis. This accumulates at via bottom of deeper via during electrolysis. SPS decomposes into monomer by electrolysis and this may accumulate and accelerate the via bottom current
Keywords :
cathodes; electrodeposition; interconnections; molecules; packaging; Bis(3-sulfopropyl) disulfide; SPS concentration; aspect ratios; bottom accelerating additives; bumping; deposit thickness; electrolysis; patterned cathode; via filling electrodeposition; Acceleration; Additives; Cathodes; Copper; Current measurement; Electrochemical processes; Electronics packaging; Filling; Resists; Wafer scale integration;
Conference_Titel :
Electronic Materials and Packaging, 2001. EMAP 2001. Advances in
Conference_Location :
Jeju Island
Print_ISBN :
0-7803-7157-7
DOI :
10.1109/EMAP.2001.983960
