Fundamental aspects in bumping and via filling electrodeposition

Author

Kondo, Kazuo

Author_Institution

Dept. of Appl. Chem., Okayama Univ., Japan

fYear

2001

fDate

2001

Firstpage

69

Lastpage

72

Abstract

Fundamental aspects in bumping and via filling will be addressed. A detailed mechanism of copper via filling will be emphasised. Copper Damascene via bottom accelerating additives was investigated by patterned cathode of cathode only at via bottom. With SPS in addition to Cl, PEG and JGB, the current of via bottom cathode increases. This current also increases with an increase in SPS concentration. This accelerating effect of SPS was found with typical combination of four additives (Cl+PEG+JGB+SPS) used for via filling. The current increases with an increase in aspect ratios of patterned cathode. With higher aspect ratio of deeper via, the via bottom accelerating substance must be accumulated at via bottom. This substance is related to SPS. From the cross section observation of deposit thickness, this via bottom accelerating substance must form during electrolysis. This accumulates at via bottom of deeper via during electrolysis. SPS decomposes into monomer by electrolysis and this may accumulate and accelerate the via bottom current

Keywords

cathodes; electrodeposition; interconnections; molecules; packaging; Bis(3-sulfopropyl) disulfide; SPS concentration; aspect ratios; bottom accelerating additives; bumping; deposit thickness; electrolysis; patterned cathode; via filling electrodeposition; Acceleration; Additives; Cathodes; Copper; Current measurement; Electrochemical processes; Electronics packaging; Filling; Resists; Wafer scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronic Materials and Packaging, 2001. EMAP 2001. Advances in

Conference_Location

Jeju Island

Print_ISBN

0-7803-7157-7

Type

conf

DOI

10.1109/EMAP.2001.983960

Filename

983960