DocumentCode
2245879
Title
Golay-cell type of miniaturized infrared sensor using Si-diaphragm
Author
Yamashita, Kaoru ; Murata, Akishi ; Okuyama, Masanori
Author_Institution
Fac. of Eng. Sci., Osaka Univ., Japan
Volume
2
fYear
1997
fDate
16-19 Jun 1997
Firstpage
1067
Abstract
A miniaturized capacitance-detection type of infrared sensor based on the principle of the Golay-cell has been developed using silicon micromachining. The sensor has a tiny gas chamber with thin silicon diaphragm forming one side of electrodes of a parallel planar capacitor. Illuminated infrared light heats the gas in the chamber and then deflection of the diaphragm induced by expansion of the gas is detected as capacitance change of the capacitor. The chamber of our device is completely sealed and can be filled by various kinds of gas. The sensor containing a certain gas shows a specific response of the intrinsic spectrum of absorption of ambient gas. Selective detectability of ambient gas has been confirmed using various sensors containing different gases
Keywords
elemental semiconductors; gas sensors; infrared detectors; microsensors; silicon; Golay-cell miniaturized infrared sensor; IR sensor; Si; Si diaphragm; Si micromachining; ambient gas; gas chamber; parallel planar capacitor; response analysis; selective detectability; Capacitance; Capacitive sensors; Capacitors; Electrodes; Gas detectors; Infrared detectors; Infrared heating; Infrared sensors; Micromachining; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Sensors and Actuators, 1997. TRANSDUCERS '97 Chicago., 1997 International Conference on
Conference_Location
Chicago, IL
Print_ISBN
0-7803-3829-4
Type
conf
DOI
10.1109/SENSOR.1997.635379
Filename
635379
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