Title :
Effect of network topology on nanocluster film transport
Author :
Rendell, R.W. ; Ancona, M.G. ; Kruppa, W. ; Foos, E.E. ; Snow, A.W. ; Park, D. ; Boos, J.B.
Author_Institution :
Naval Res. Lab., Washington, DC, USA
Abstract :
The effects of network topology on electron transport is studied using Monte Carlo simulations of tunnel junction networks with transport governed by Coulomb blockade. Both the threshold voltage shift and the nonlinearity of the I-V curves are sensitive to lateral fluctuations of the conduction paths due to random voids. The nonlinearity is found to be maximized for aspect ratios of the network of unity or larger and for random void networks with 50% horizontal connections. Comparisons are made with Au nanocluster I-V measurements.
Keywords :
Coulomb blockade; Monte Carlo methods; current fluctuations; gold; metallic thin films; nanostructured materials; tunnelling; voids (solid); Au; Au nanocluster I-V measurements; Coulomb blockade; I-V curve nonlinearity; Monte Carlo simulations; conduction path fluctuations; electron transport; nanocluster film transport; network topology effect; random voids; spect ratios; threshold voltage shift; tunnel junction networks; Electrodes; Electrons; Gold; Nanoscale devices; Network topology; Snow; Temperature dependence; Temperature distribution; Temperature sensors; Threshold voltage;
Conference_Titel :
Nanotechnology, 2002. IEEE-NANO 2002. Proceedings of the 2002 2nd IEEE Conference on
Print_ISBN :
0-7803-7538-6
DOI :
10.1109/NANO.2002.1032237
