Evaluation of program, erase and retention times of flash memories with very thin gate dielectric

Author

Iannaccone, G.

Author_Institution

Dipt. di Ingegneria dell´´Informazione, Universita degli studi di Pisa, Italy

fYear

2002

fDate

2002

Firstpage

247

Lastpage

250

Abstract

We have developed a code for the simulation of the complete program and erase process of a flash EEPROM via direct Fowler-Nordheim tunneling from the channel. The code is based on the solution of the Poisson-Schrodinger equation in one dimension, and on the computation of the tunneling current from the detailed solution of the barrier transmission problem. We are able to compute the program, erase and retention time of a flash memory structure with a given gate stack, and therefore to design an optimized layer structure with respect to the trade-off between program and retention times.

Keywords

Poisson equation; Schrodinger equation; flash memories; semiconductor device models; semiconductor storage; tunnelling; 1D Poisson-Schrodinger equation; Fowler-Nordheim tunneling; barrier transmission problem; erase process; flash EEPROM; flash memories; optimized layer structure; program; retention time; tunneling current; very thin gate dielectric; Charge carrier processes; Design optimization; Dielectrics; EPROM; Electrons; Flash memory; Nonvolatile memory; Schrodinger equation; Tunneling; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanotechnology, 2002. IEEE-NANO 2002. Proceedings of the 2002 2nd IEEE Conference on

Print_ISBN

0-7803-7538-6

Type

conf

DOI

10.1109/NANO.2002.1032239

Filename

1032239