CdS nanoparticles embedded in metal-insulator-semiconductor structures

Author

Malik, S. ; Ray, A.K. ; Hassan, A.K. ; Nabok, A.V.

Author_Institution

Nanotechnology Res. Labs., Sheffield Hallam Univ., UK

fYear

2002

fDate

2002

Firstpage

265

Lastpage

268

Abstract

Metal-insulator-semiconductor structures were fabricated using 40 layers thick Langmuir-Blodgett (LB) films of stearic acid (SA) on hydrophobic n-type silicon (n-Si) substrates. Samples containing cadmium sulphide (CdS) nanoparticles exhibit higher rectification than untreated ones by two orders of magnitudes. The flat band voltage was found to be 0.5 V from the capacitance measurement. The effective dielectric constant of the CdS embedded SA matrix was estimated to be 5.2.

Keywords

II-VI semiconductors; Langmuir-Blodgett films; MIS structures; cadmium compounds; capacitance; composite materials; nanoparticles; organic compounds; permittivity; rectification; 0.5 V; CdS; CdS nanoparticles; LB films; Langmuir-Blodgett films; Si; capacitance measurement; effective dielectric constant; flat band voltage; hydrophobic n-type silicon substrate; metal-insulator-semiconductor structures; rectification; stearic acid; Aluminum; Atmosphere; Capacitance measurement; Hydrogen; Metal-insulator structures; Nanoparticles; Semiconductor films; Silicon; Substrates; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanotechnology, 2002. IEEE-NANO 2002. Proceedings of the 2002 2nd IEEE Conference on

Print_ISBN

0-7803-7538-6

Type

conf

DOI

10.1109/NANO.2002.1032243

Filename

1032243