Title :
CdS nanoparticles embedded in metal-insulator-semiconductor structures
Author :
Malik, S. ; Ray, A.K. ; Hassan, A.K. ; Nabok, A.V.
Author_Institution :
Nanotechnology Res. Labs., Sheffield Hallam Univ., UK
Abstract :
Metal-insulator-semiconductor structures were fabricated using 40 layers thick Langmuir-Blodgett (LB) films of stearic acid (SA) on hydrophobic n-type silicon (n-Si) substrates. Samples containing cadmium sulphide (CdS) nanoparticles exhibit higher rectification than untreated ones by two orders of magnitudes. The flat band voltage was found to be 0.5 V from the capacitance measurement. The effective dielectric constant of the CdS embedded SA matrix was estimated to be 5.2.
Keywords :
II-VI semiconductors; Langmuir-Blodgett films; MIS structures; cadmium compounds; capacitance; composite materials; nanoparticles; organic compounds; permittivity; rectification; 0.5 V; CdS; CdS nanoparticles; LB films; Langmuir-Blodgett films; Si; capacitance measurement; effective dielectric constant; flat band voltage; hydrophobic n-type silicon substrate; metal-insulator-semiconductor structures; rectification; stearic acid; Aluminum; Atmosphere; Capacitance measurement; Hydrogen; Metal-insulator structures; Nanoparticles; Semiconductor films; Silicon; Substrates; Voltage;
Conference_Titel :
Nanotechnology, 2002. IEEE-NANO 2002. Proceedings of the 2002 2nd IEEE Conference on
Print_ISBN :
0-7803-7538-6
DOI :
10.1109/NANO.2002.1032243
