Title :
Blueshifting of In GaAsP-InGaAsP MQW Laser Diodes Using a High-Energy Ion-Implantation Technique
Author :
Kim, Su Hyun ; Byun, Young Tae ; Chung, Young Chul
Author_Institution :
Photonics Res. Center, Korea Inst. of Sci. & Technol. (KIST), Seoul
Abstract :
Blueshifted laser diodes have been fabricated using a quantum well interdiffusion process based on high-energy ion implantation. Results obtained with the as-grown and implanted MQW wafers are compared. For the implanted laser structures, blueshifts as large as 200 nm were obtained.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; ion implantation; optical fabrication; quantum well lasers; spectral line shift; InGaAsP; MQW laser diodes; blueshifting; high-energy ion implantation; high-energy ion-implantation technique; implanted laser structures; quantum well interdiffusion process; Diode lasers; Fiber lasers; Laser modes; Monolithic integrated circuits; Optical device fabrication; Photonics; Quantum well devices; Quantum well lasers; Substrates; Temperature;
Conference_Titel :
Lasers and Electro-Optics - Pacific Rim, 2007. CLEO/Pacific Rim 2007. Conference on
Conference_Location :
Seoul
Print_ISBN :
978-1-4244-1173-3
Electronic_ISBN :
978-1-4244-1174-0
DOI :
10.1109/CLEOPR.2007.4391492
