A prototyping technique for large-scale RTD-CMOS circuits

Author

Bhattacharya, Mayukh ; Kulkarni, Santosh ; González, Alejandro ; Mazumder, Pinaki

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA

Volume

1

fYear

2000

fDate

2000

Firstpage

635

Abstract

In this paper we present a method for prototyping circuits designed using resonant-tunneling diodes (RTDs) and complementary metal-oxide-semiconductor (CMOS) devices that can enable us to realize large-scale digital circuits with negative differential-resistance (NDR) devices. Our method is based on designing CMOS circuits which can emulate the current-voltage (I-V) characteristics of RTDs. We demonstrate the effectiveness of our scheme by means of simulation and fabrication of an NDR shift register circuit

Keywords

CMOS digital integrated circuits; CMOS logic circuits; VLSI; logic design; negative resistance circuits; resonant tunnelling diodes; shift registers; I-V characteristics emulation; NDR devices; NDR shift register circuit; current-voltage characteristics; large-scale RTD-CMOS circuits; large-scale digital circuits; negative differential-resistance devices; prototyping technique; resonant-tunneling diodes; CMOS digital integrated circuits; Circuit simulation; Digital circuits; Diodes; Fabrication; Large-scale systems; Prototypes; RLC circuits; Resonant tunneling devices; Shift registers;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 2000. Proceedings. ISCAS 2000 Geneva. The 2000 IEEE International Symposium on

Conference_Location

Geneva

Print_ISBN

0-7803-5482-6

Type

conf

DOI

10.1109/ISCAS.2000.857175

Filename

857175