DocumentCode
2246367
Title
Optical Properties of InGaAsP Asymmetric Double Quantum Wells: Enhanced Slope Efficiency and Reduced Bias Voltage in QW-EAM´s
Author
Kim, Dong Kwon ; Citrin, D.S.
Author_Institution
Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA
fYear
2007
fDate
26-31 Aug. 2007
Firstpage
1
Lastpage
2
Abstract
Detailed theoretical estimations of the optical properties of InGaAsP QW-EAM´s operating at ~1550 nm were executed. Subsequently, asymmetric double quantum wells are predicted to enhance slope efficiency by more than 350% at a reduced operating bias field of 34 kV/cm compared with ~70 kV/cm for comparable SQW´s.
Keywords
III-V semiconductors; electro-optical modulation; gallium arsenide; gallium compounds; indium compounds; optical materials; quantum well devices; semiconductor quantum wells; InGaAsP; InGaAsP asymmetric double quantum wells; QW-EAM; slope efficiency; Estimation theory; Excitons; Optical computing; Optical mixing; Optical modulation; Optical waveguides; Propagation losses; Quantum computing; Quantum mechanics; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics - Pacific Rim, 2007. CLEO/Pacific Rim 2007. Conference on
Conference_Location
Seoul
Print_ISBN
978-1-4244-1173-3
Electronic_ISBN
978-1-4244-1174-0
Type
conf
DOI
10.1109/CLEOPR.2007.4391495
Filename
4391495
Link To Document