Title :
Process simulation high performance bipolar and BiCMOS devices
Author :
Plummer, J.D. ; Griffin, P.B. ; Huang, R.
Author_Institution :
Integrated Circuits Lab., Stanford Univ., CA, USA
Abstract :
SUPREM IV, an advanced 2-D process simulator based on the latest physical models for silicon process physics, is presented. It is designed to interface directly with 2-D device simulators like PISCES to produce accurate predictions of device structural and electrical characteristics. SUPREM IV, the point defect diffusion models on which it is based, and its application to high-performance bipolar and BiCMOS process and device design are described. In particular, SUPREM IV simulations are compared with a 2-μm BiCMOS test process. The process technology is sketched, and the simulation results are presented and discussed
Keywords :
BIMOS integrated circuits; bipolar integrated circuits; digital simulation; integrated circuit technology; semiconductor device models; 2-D process simulator; BiCMOS process; PISCES; SUPREM IV; Si process physics; high-performance bipolar; physical models; point defect diffusion models; process technology; BiCMOS integrated circuits; Circuit simulation; Computational modeling; Data mining; Electric variables measurement; Impurities; Laboratories; Oxidation; Predictive models; Semiconductor device modeling;
Conference_Titel :
Bipolar Circuits and Technology Meeting, 1989., Proceedings of the 1989
Conference_Location :
Minneapolis, MN
DOI :
10.1109/BIPOL.1989.69513
