DocumentCode
2246616
Title
Formation of ultra-thin PtSi layers with a 2-step silicidation process
Author
Donaton, R.A. ; Jin, S. ; Bender, H. ; Maex, K. ; Vantomme, A. ; Langouche, G.
Author_Institution
IMEC, Leuven, Belgium
fYear
1997
fDate
16-19 March 1997
Firstpage
118
Lastpage
119
Abstract
We propose a new technique to form ultra-thin PtSi layers based on sputter deposition of the metal and two-step silicidation by rapid thermal processing, which are production tools used in standard silicon processing technologies.
Keywords
chemical interdiffusion; metallic thin films; metallisation; platinum compounds; rapid thermal processing; sputter deposition; PtSi; rapid thermal processing; silicon technology; sputter deposition; two-step silicidation; ultra-thin PtSi layer; Atomic force microscopy; Inorganic materials; Silicidation; Silicides; Silicon; Sputter etching; Sputtering; Substrates; Thickness control; Transmission electron microscopy;
fLanguage
English
Publisher
ieee
Conference_Titel
Materials for Advanced Metallization, 1997. MAM '97 Abstracts Booklet., European Workshop
Conference_Location
Villard de Lans, France
ISSN
1266-0167
Type
conf
DOI
10.1109/MAM.1997.621080
Filename
621080
Link To Document