DocumentCode
2246764
Title
BiCMES and BiCMOD: bipolar-FET logic configurations for high speed applications
Author
Chu, Daniel Y. ; Abdel-Motaleb, Ibrahim M.
Author_Institution
Dept. of Electr. Eng. & Comput. Sci., Northwestern Univ., Evanston, IL, USA
fYear
1989
fDate
18-19 Sep 1989
Firstpage
311
Lastpage
314
Abstract
The performance of eight different BiCMOS logic configurations is discussed. The Z-type structure is found to be the most promising. The characteristics of Z-type inverters for Si MESFET and GaAlAs MODFET technologies are analyzed. The analysis shows that bipolar complementary structures, in general, can provide superior performance to other logic structures, and that BiCMES and BiCMOD structures can operate at higher speeds and lower power than BiCMOS
Keywords
BIMOS integrated circuits; Schottky gate field effect transistors; high electron mobility transistors; integrated logic circuits; invertors; BiCMES; BiCMOD; BiCMOS logic configurations; GaAlAs; MESFET; MODFET technologies; Si; Z-type structure; bipolar complementary structures; bipolar-FET logic configurations; high speed applications; power; speeds; BiCMOS integrated circuits; Capacitance; FETs; HEMTs; Impedance; Inverters; Logic devices; MESFETs; MODFETs; MOSFETs;
fLanguage
English
Publisher
ieee
Conference_Titel
Bipolar Circuits and Technology Meeting, 1989., Proceedings of the 1989
Conference_Location
Minneapolis, MN
Type
conf
DOI
10.1109/BIPOL.1989.69515
Filename
69515
Link To Document