Title :
Arsenic solubility in single crystalline cobalt disilicide
Author :
Mangelinck, D. ; Cardenas, J. ; Svensson, B.G.
Author_Institution :
Solid State Electron., R. Inst. of Technol., Stockholm, Sweden
Abstract :
The interaction of silicon dopants with silicides is of crucial importance for integrated silicon technology. The presence of dopant may influence the silicide formation kinetics and its redistribution may change the electrical properties of the silicide-silicon structure. Implanted silicides have been also suggested as a dopant source for formation of shallow junctions. In both cases the solubility and the diffusion of dopants in silicide must be known to control the dopant behaviour. Cobalt disilicide (CoSi/sub 2/) is one of the most used silicides in device applications and the possibility of using implanted boron as diffusion source for formation of shallow junction has been demonstrated. In this contribution the solid solubility of arsenic in CoSi/sub 2/ has been investigated at temperatures between 650/spl deg/C and 950/spl deg/C.
Keywords :
arsenic; cobalt compounds; elemental semiconductors; integrated circuit metallisation; semiconductor doping; silicon; solid solubility; 650 to 950 degC; Si:As-CoSi/sub 2/; dopant behaviour; dopant interaction; electrical properties; shallow junctions; silicide formation kinetics; solid solubility; Annealing; Boron; Cobalt; Crystallization; Inorganic materials; Silicides; Silicon; Solids; Substrates; Temperature;
Conference_Titel :
Materials for Advanced Metallization, 1997. MAM '97 Abstracts Booklet., European Workshop
Conference_Location :
Villard de Lans, France
DOI :
10.1109/MAM.1997.621081
