Title :
Prospects for epitaxial c-Er2O3 as a CMOS-compatible lasing material
Author :
Michael, C.P. ; Painter, O. ; Yuen, H.B. ; Sabnis, V.A. ; Jamora, A. ; Semans, S. ; Atanackovic, P.B.
Author_Institution :
Dept. of Appl. Phys., California Inst. of Technol., Pasadena, CA
Abstract :
The emission of high-Q c-Er2O3 resonators displays little inhomogeneous broadening, robust vacuum-Rabi splitting, and strong upconversion. Considering these effects and a rate-equation model, we analyze the prospects for optically pumped on-chip lasing using c-Er2O3.
Keywords :
CMOS integrated circuits; erbium compounds; integrated optics; optical pumping; solid lasers; CMOS-compatible lasing material; Er2O3; inhomogeneous broadening; optically pumped on-chip lasing; resonators; robust vacuum-Rabi splitting; upconversion; High speed optical techniques; Laser modes; Microcavities; Optical interconnections; Optical materials; Optical pumping; Optical resonators; Optical scattering; Plasma temperature; Probes; (160.3380) Laser Materials; (230.5750) Resonators; (270.1670) Coherent optical effects;
Conference_Titel :
Lasers and Electro-Optics, 2008 and 2008 Conference on Quantum Electronics and Laser Science. CLEO/QELS 2008. Conference on
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-55752-859-9
