Analytical modeling of squeeze film damping in accelerometers

Author

Bourgeois, C. ; Porret, F. ; Hoogerwerf, A.

Author_Institution

Centre Suisse d´´Electron. et de Microtech. SA, Neuchatel, Switzerland

Volume

2

fYear

1997

fDate

16-19 Jun 1997

Firstpage

1117

Abstract

An analytical model has been developed and applied to the design of capacitive silicon accelerometers. The model is obtained by minimizing the global energy of the elastic, inertial and electrostatic forces acting on the movable mass, and the reacting internal and dissipative forces in the gas. The approach is verified through experimental measurements. Particularly good results were obtained for the estimation of the resonant frequency and the damping as a function of the gas pressure

Keywords

accelerometers; damping; frequency response; microsensors; minimisation; semiconductor device models; Si; analytical model; capacitive Si accelerometers; damping; dissipative forces; elastic forces; electrostatic forces; gas pressure dependence; global energy minimization; inertial forces; reacting internal forces; resonant frequency; squeeze film damping; Accelerometers; Analytical models; Damping; Electrodes; Finite element methods; Frequency response; Microsensors; Silicon; Solid modeling; Viscosity;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid State Sensors and Actuators, 1997. TRANSDUCERS '97 Chicago., 1997 International Conference on

Conference_Location

Chicago, IL

Print_ISBN

0-7803-3829-4

Type

conf

DOI

10.1109/SENSOR.1997.635398

Filename

635398