Title :
Analytical modeling of squeeze film damping in accelerometers
Author :
Bourgeois, C. ; Porret, F. ; Hoogerwerf, A.
Author_Institution :
Centre Suisse d´´Electron. et de Microtech. SA, Neuchatel, Switzerland
Abstract :
An analytical model has been developed and applied to the design of capacitive silicon accelerometers. The model is obtained by minimizing the global energy of the elastic, inertial and electrostatic forces acting on the movable mass, and the reacting internal and dissipative forces in the gas. The approach is verified through experimental measurements. Particularly good results were obtained for the estimation of the resonant frequency and the damping as a function of the gas pressure
Keywords :
accelerometers; damping; frequency response; microsensors; minimisation; semiconductor device models; Si; analytical model; capacitive Si accelerometers; damping; dissipative forces; elastic forces; electrostatic forces; gas pressure dependence; global energy minimization; inertial forces; reacting internal forces; resonant frequency; squeeze film damping; Accelerometers; Analytical models; Damping; Electrodes; Finite element methods; Frequency response; Microsensors; Silicon; Solid modeling; Viscosity;
Conference_Titel :
Solid State Sensors and Actuators, 1997. TRANSDUCERS '97 Chicago., 1997 International Conference on
Conference_Location :
Chicago, IL
Print_ISBN :
0-7803-3829-4
DOI :
10.1109/SENSOR.1997.635398
