DocumentCode
2247159
Title
The effect of release-etch holes on the electromechanical behaviour of MEMS structures
Author
Rabinovich, Vladimir L. ; Gupta, Raj K. ; Senturia, Stephen D.
Author_Institution
MIT, Cambridge, MA, USA
Volume
2
fYear
1997
fDate
16-19 Jun 1997
Firstpage
1125
Abstract
When wet etches are used to release a large microstructural element, it is common practice to distribute small holes in the microstructure to promote under-etching and release, and for reduction of squeezed-film damping. In this paper, we demonstrate that while the mechanical properties are strongly affected by the presence of etch holes, because of fringing-field effects at the edges of the etched holes, the electrostatic-force behaviour of structural elements with an array of small etched holes is nearly that of an unetched element. This leads to an “effective medium” approximation for the mechanical material that can then be used with standard electrostatic actuation models to give good predictions of electromechanical behaviour. Comparison with experimental device behaviour shows the validity of this approach
Keywords
elastic constants; electrostatic devices; etching; internal stresses; microactuators; micromechanical resonators; MEMS structures; effective media elastic constants; effective medium approximation; electromechanical behaviour; electrostatic actuation models; electrostatic-force behaviour; fringing-field effects; large microstructural element; mechanical properties; release-etch holes; residual stress; resonance frequency; squeezed-film damping; under-etching; wet etch; Boundary conditions; Capacitive sensors; Damping; Electrostatic actuators; Ligaments; Mechanical factors; Micromechanical devices; Microstructure; Predictive models; Wet etching;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Sensors and Actuators, 1997. TRANSDUCERS '97 Chicago., 1997 International Conference on
Conference_Location
Chicago, IL
Print_ISBN
0-7803-3829-4
Type
conf
DOI
10.1109/SENSOR.1997.635400
Filename
635400
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