• DocumentCode
    2247180
  • Title

    Generation of THz pulses in Teflon bonded periodically inverted GaAs structures

  • Author

    Tochitsky, S.Ya. ; Trubnick, S.E. ; Joshi, C.

  • Author_Institution
    Dept. of Electr. Eng., UCLA, Los Angeles, CA
  • fYear
    2008
  • fDate
    4-9 May 2008
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    A novel technique for low-temperature bonding of GaAs wafers using an interboundary Teflon film is developed. A 2 x 2 cm2 quasi-phase matched structure of 5 wafers pumped by CO2 laser lines generated the narrow-band THz radiation.
  • Keywords
    III-V semiconductors; bonding processes; carbon compounds; gallium arsenide; gas lasers; microwave photonics; optical frequency conversion; optical phase matching; submillimetre wave generation; GaAs; THz pulse generation; Teflon bonding; carbon dioxide laser lines; difference-frequency generation; interboundary Teflon film; low-temperature bonding; narrow-band THz radiation; periodically inverted structures; quasiphase matched structure; Crystals; Gallium arsenide; Laser excitation; Nonlinear optics; Optical films; Optical pulse generation; Optical pumping; Pulse generation; Pump lasers; Wafer bonding; (140.3470) Lasers, carbon dioxide; (190.0190) Nonlinear optics; (310.6845)Thin film devices;
  • fLanguage
    English
  • Publisher
    iet
  • Conference_Titel
    Lasers and Electro-Optics, 2008 and 2008 Conference on Quantum Electronics and Laser Science. CLEO/QELS 2008. Conference on
  • Conference_Location
    San Jose, CA
  • Print_ISBN
    978-1-55752-859-9
  • Type

    conf

  • Filename
    4571917
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2247180