Title :
Generation of THz pulses in Teflon bonded periodically inverted GaAs structures
Author :
Tochitsky, S.Ya. ; Trubnick, S.E. ; Joshi, C.
Author_Institution :
Dept. of Electr. Eng., UCLA, Los Angeles, CA
Abstract :
A novel technique for low-temperature bonding of GaAs wafers using an interboundary Teflon film is developed. A 2 x 2 cm2 quasi-phase matched structure of 5 wafers pumped by CO2 laser lines generated the narrow-band THz radiation.
Keywords :
III-V semiconductors; bonding processes; carbon compounds; gallium arsenide; gas lasers; microwave photonics; optical frequency conversion; optical phase matching; submillimetre wave generation; GaAs; THz pulse generation; Teflon bonding; carbon dioxide laser lines; difference-frequency generation; interboundary Teflon film; low-temperature bonding; narrow-band THz radiation; periodically inverted structures; quasiphase matched structure; Crystals; Gallium arsenide; Laser excitation; Nonlinear optics; Optical films; Optical pulse generation; Optical pumping; Pulse generation; Pump lasers; Wafer bonding; (140.3470) Lasers, carbon dioxide; (190.0190) Nonlinear optics; (310.6845)Thin film devices;
Conference_Titel :
Lasers and Electro-Optics, 2008 and 2008 Conference on Quantum Electronics and Laser Science. CLEO/QELS 2008. Conference on
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-55752-859-9
