Electromigration behavior of eutectic SnPb solder

Author

Choi, Jae-Young ; Lee, Sang-Su ; Paik, Jong-Min ; Joo, Young-Chang

Author_Institution

Dept. of Material Sci. & Eng., Seoul Nat. Univ., South Korea

fYear

2001

fDate

2001

Firstpage

417

Lastpage

420

Abstract

Following the trend of miniaturization of VLSI devices, the current density of flip-chip ball bumps has increased significantly and each solder joint is supporting a current density close to 10⁴ A/cm². Therefore, in SnPb eutectic solder, which has a high diffusivity at the operating temperature due to its low melting point, electromigration became a major reliability threat. We have investigated electromigration behavior of eutectic SnPb solder using thin stripe-type specimens. From the 80°C and 100°C testing, the activation energy for electromigration was calculated as 0.9 eV and the dominant diffusion paths were through interface and surface. From the compositional analysis, it was found that Pb is a dominant migrating species over Sn atoms for 100°C testing

Keywords

current density; electromigration; flip-chip devices; lead alloys; packaging; reliability; soldering; tin alloys; 0.9 eV; 100 degC; 80 degC; SnPb; VLSI; activation energy; compositional analysis; current density; diffusion paths; diffusivity; dominant migrating species; electromigration behavior; flip-chip ball bumps; melting point; miniaturization; operating temperature; reliability; solder joint; stripe-type specimens; Circuit testing; Current density; Electromigration; Electrons; Flip chip; Geometry; Integrated circuit interconnections; Performance evaluation; Temperature; Tin;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronic Materials and Packaging, 2001. EMAP 2001. Advances in

Conference_Location

Jeju Island

Print_ISBN

0-7803-7157-7

Type

conf

DOI

10.1109/EMAP.2001.984020

Filename

984020