DocumentCode
2247416
Title
Photoinduced critical slowing down of femtosecond hole spin relaxation in ferromagnetic GaMnAs
Author
Tianqi Li ; Patz, A. ; Perakis, W.E. ; Xinyu Liu ; Furdyna, J.K. ; Jigang Wang
Author_Institution
Dept. of Phys. & Astron., Iowa State Univ., Ames, IA, USA
fYear
2011
fDate
1-6 May 2011
Firstpage
1
Lastpage
2
Abstract
We report for the first time photoinduced femtosecond hole spin dynamics and critical behaviors in a ferromagnetic semiconductor, revealing, in particular, a critical slowing down of hole spin relaxation near ferro- to paramagnetic phase transition.
Keywords
III-V semiconductors; ferromagnetic materials; ferromagnetic-paramagnetic transitions; gallium arsenide; high-speed optical techniques; magnetic semiconductors; manganese compounds; optical materials; paramagnetic materials; spin dynamics; GaMnAs; femtosecond hole spin relaxation; ferromagnetic semiconductor; ferromagnetic-paramagnetic phase transition; hole spin dynamics; photoinduced critical slowing down; Fluctuations; Manganese; Materials; Optical sensors; Physics; Transient analysis; Ultrafast optics;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics (CLEO), 2011 Conference on
Conference_Location
Baltimore, MD
Print_ISBN
978-1-4577-1223-4
Type
conf
Filename
5950911
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