DocumentCode :
2247459
Title :
Ultrafast THz saturable absorption in doped semiconductors
Author :
Turchinovich, Dmitry ; Hoffmann, Matthias C.
Author_Institution :
DTU Fotonik-Dept. of Photonics Eng., Tech. Univ. of Denmark, Lyngby, Denmark
fYear :
2011
fDate :
1-6 May 2011
Firstpage :
1
Lastpage :
2
Abstract :
We demonstrate ultrafast THz saturable absorption in n-doped semiconductors by nonlinear THz time-domain spectroscopy. This effect is caused by the semiconductor conductivity modulation due to electron heating and satellite-valley scattering in strong THz fields.
Keywords :
high-speed optical techniques; nonlinear optics; optical saturable absorption; semiconductor materials; terahertz spectroscopy; electron heating; n-doped semiconductors; nonlinear THz time-domain spectroscopy; satellite-valley scattering; semiconductor conductivity modulation; ultrafast THz saturable absorption; Absorption; Gallium arsenide; Nonlinear optics; Optical pulses; Optical pumping; Spectroscopy; Ultrafast optics;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2011 Conference on
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-4577-1223-4
Type :
conf
Filename :
5950913
Link To Document :
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