DocumentCode
2247459
Title
Ultrafast THz saturable absorption in doped semiconductors
Author
Turchinovich, Dmitry ; Hoffmann, Matthias C.
Author_Institution
DTU Fotonik-Dept. of Photonics Eng., Tech. Univ. of Denmark, Lyngby, Denmark
fYear
2011
fDate
1-6 May 2011
Firstpage
1
Lastpage
2
Abstract
We demonstrate ultrafast THz saturable absorption in n-doped semiconductors by nonlinear THz time-domain spectroscopy. This effect is caused by the semiconductor conductivity modulation due to electron heating and satellite-valley scattering in strong THz fields.
Keywords
high-speed optical techniques; nonlinear optics; optical saturable absorption; semiconductor materials; terahertz spectroscopy; electron heating; n-doped semiconductors; nonlinear THz time-domain spectroscopy; satellite-valley scattering; semiconductor conductivity modulation; ultrafast THz saturable absorption; Absorption; Gallium arsenide; Nonlinear optics; Optical pulses; Optical pumping; Spectroscopy; Ultrafast optics;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics (CLEO), 2011 Conference on
Conference_Location
Baltimore, MD
Print_ISBN
978-1-4577-1223-4
Type
conf
Filename
5950913
Link To Document