DocumentCode :
2247494
Title :
Dynamics of photo-excited carriers in gallium nitride under subpicosecond laser pulse excitation
Author :
Rudin, S. ; Bellotti, E. ; Garrett, G.A. ; Wraback, M.
Author_Institution :
U.S. Army Res. Lab., Adelphi, MD, USA
fYear :
2011
fDate :
1-6 May 2011
Firstpage :
1
Lastpage :
3
Abstract :
We present a study of subpicosecond kinetics of photo-excited carriers in bulk gallium nitride. The theoretical results are compared with the experimental results of the time-resolved photoluminescence induced by a 100-femtosecond pulse.
Keywords :
III-V semiconductors; gallium compounds; high-speed optical techniques; laser beams; photoexcitation; photoluminescence; wide band gap semiconductors; photo excited carrier; subpicosecond laser pulse excitation; time 100 fs; time resolved photoluminescence; Charge carrier processes; Gallium nitride; Luminescence; Mathematical model; Optical pumping; Phonons; Scattering;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2011 Conference on
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-4577-1223-4
Type :
conf
Filename :
5950915
Link To Document :
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