A piezoresistive accelerometer with a novel vertical beam structure

Author

Chen, Hong ; Bao, Minhang ; Zhu, Haijun ; Shen, Shaoqun

Author_Institution

Dept. of Electron. Eng., Fudan Univ., Shanghai, China

Volume

2

fYear

1997

fDate

16-19 Jun 1997

Firstpage

1201

Abstract

A beam-mass piezoresistive micro-accelerometer sensitive to acceleration components in the chip plane and vertical to the beam direction has been developed. The beam is in the ⟨100⟩ direction with sidewalls vertical to the (001) wafer surface. The top side of the beam is widened slightly to make enough room to accommodate the piezoresistors. Therefore, the beam has a T-shaped cross-section. Two n-type piezoresistors on the top side of the beam, forming a half bridge, serve as sensing elements. The sensitivity of the device is about 0.5 mv/g/5v and the resonant frequency is about 1.2 kHz

Keywords

accelerometers; frequency response; micromachining; micromechanical resonators; microsensors; piezoresistive devices; (001) wafer surface; 1.2 kHz; Si; T-shaped cross-section; acceleration sensitivity; beam-mass piezoresistive micro-accelerometer; half bridge; n-type piezoresistors; piezoresistive accelerometer; resonant frequency; sensing element design; vertical beam structure; Acceleration; Accelerometers; Bridges; Flanges; Particle beams; Piezoresistance; Piezoresistive devices; Resistors; Resonant frequency; Stress;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid State Sensors and Actuators, 1997. TRANSDUCERS '97 Chicago., 1997 International Conference on

Conference_Location

Chicago, IL

Print_ISBN

0-7803-3829-4

Type

conf

DOI

10.1109/SENSOR.1997.635421

Filename

635421